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Proceedings Paper

Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised Silicon
Author(s): S. D. Brotherton; J. R. Ayres; B. J. Goldsmith; A. Gill
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Paper Abstract

Pre-amorphisation of silicon substrates with a high dose of 28Si+ is known to suppress the axial channelling of subsequent low energy boron implants and thus lead to shallow junction formation. However, it is shown that for amorphous layer regrowth below 800°C a high concentration of deep level donor defects (1-2 x 1017 cm-3) remains in the tail of the Si + implant. These have been directly correlated with the large leakage current densities (up to 10-A/cm2) measured in these low temperature activated devices. Smaller (tilde 10-5 A/cm2) leakage current densities were found in similarly pre-amorphised n+p diodes. It is shown that the difference can be explained by the donors forming a floating, and less easily depleted, n-type region in the n+p diodes.

Paper Details

Date Published: 22 April 1987
PDF: 7 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941023
Show Author Affiliations
S. D. Brotherton, Philips Research Laboratories (England)
J. R. Ayres, Philips Research Laboratories (England)
B. J. Goldsmith, Philips Research Laboratories (England)
A. Gill, Philips Research Laboratories (England)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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