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Proceedings Paper

Effects Of Rapid Thermal Processing On Device Reliability
Author(s): S. K. Lee; D. K. Shih; Y. H. Ku; E. Louis; D. L. Kwong; C. O Lee
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Paper Abstract

Device reliability is an important issue for the introduction of a new process technique. In this paper, our experimental findings regarding the performance and stability of devices fabricated by rapid thermal processing (RTP) are presented. Test structures for this study include p-n junction diode, metal-oxide-semiconductor (MOS) capacitor, and n-channel MOS field-effect-transistor (MOSFET). The integrity of p-n junction is found to be wellpreserved by RTP. Charge trapping in the gate oxide of MOS capacitor is highly dependent on the RTP temperature and can be reduced to the level of furnace processed capacitor at higher temperature RTP condition. The performance of fresh n-channel MOSFET fabricated by RTP can be superior to conventional furnace processed ones. However, higher substrate current and charge trapping in the gate oxide of RTP processed devices cause slightly higher device instability as compared to the furnace annealed devices after accelerated stress.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941022
Show Author Affiliations
S. K. Lee, The University of Texas at Austin (United States)
D. K. Shih, The University of Texas at Austin (United States)
Y. H. Ku, The University of Texas at Austin (United States)
E. Louis, The University of Texas at Austin (United States)
D. L. Kwong, The University of Texas at Austin (United States)
C. O Lee, Motorola Inc. (United States)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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