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Proceedings Paper

Invited Paper The Formation Of Shallow P+N Junctions Using RTA Of BF2+ And B+ Implanted Si
Author(s): O . W. Holland; J. R. Alvis; Cotton Hance
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Paper Abstract

The formation of shallow junctions by rapid thermal annealing of BF2+ or B+ ion-implanted Si wafers was studied. Substantial differences in the dopant activation and junction depths were observed between the different samples for high-dose implantation. Dual implantation of B+ and F+ into Si was done so that the influence of flourine on dopant behavior could be studied. Flourine was found to have a marked effect and a model is proposed to account for the observations. Also, comparison between rapid thermal and conventional furnace annealing of the various implanted samples is discussed.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941021
Show Author Affiliations
O . W. Holland, Oak Ridge National Laboratory (United States)
J. R. Alvis, Motorola, Inc. (United States)
Cotton Hance, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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