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Proceedings Paper

Mechanism Of Crystal Growth Of GaAs In Chemical Vapor Deposition (CVD)
Author(s): Jun-ichi Nishizawa; Hidenori Shimawaki; Toru Kurabayashi; Masakazu Kimura
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Paper Abstract

Molecular layer epitaxy was demonstrated using TMG-AsH3 and TEG-AsH3 systems. Monomolecular layer growth per operational cycle of alternate gas injections was realized on (100) faces independent of injected TMG and AsH3 pressures in a certain range. This result implies stable chemisorption (bond-to-bond type adsorption) of reactive species by monolayer on the substrate surface. Mass spectrometric analyses suggested that this adsorbate is partially decomposed TMG, such as Ga (CH3)x, where x is a numerical function of temperature . Surface migration process was investigated in a conventional Ga-AsC13-H2 system using a triangle table method. On (111)B facets, anisotropic two-dimensional growth based on the surface migration of adsorbed species was found to be a dominant process. The direction with the largest rate of lateral growth was <12T>, while that with the smallest one was <112>.

Paper Details

Date Published: 20 April 1987
PDF: 7 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941014
Show Author Affiliations
Jun-ichi Nishizawa, Tohoku University (Japan)
Hidenori Shimawaki, Tohoku University (Japan)
Toru Kurabayashi, Tohoku University (Japan)
Masakazu Kimura, Tohoku University (Japan)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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