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Proceedings Paper

RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces
Author(s): P. Chen; T. C. Lee; N. M. Cho; A. Madhukar
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Paper Abstract

Reflection high-energy electron diffraction (RHEED) intensity dynamics has been widely accepted as a sensitive, in-situ, real time monitor of the surface morphology during the molecular beam epitaxial (MBE) growth. In this paper we focus on the behavior of the specular beam intensity as a function of the growth conditions (substrate temperature, arsenic pressure and growth rate) as well as diffraction conditions (incident angle of the electron beam, azimuthal angle) for both static (i.e., no growth) and dynamic (i.e., during growth) AlxGa1-xAs (100) (0 < x <1) surfaces. The kinetic processes underlying these observations are discussed.

Paper Details

Date Published: 20 April 1987
PDF: 11 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941010
Show Author Affiliations
P. Chen, University of Southern California (United States)
T. C. Lee, University of Southern California (United States)
N. M. Cho, University of Southern California (United States)
A. Madhukar, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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