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Proceedings Paper

Monte Carlo Simulation Of The Growth Of ZnSe By MBE
Author(s): R. Venkatasubramanian; N. Otsuka; S. Datta; L. A. Kolodziejski; R. L. Gunshor
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Paper Abstract

A Monte Carlo study of the growth of ZnSe by molecular beam epitaxy is presented. The study is focused on the role of surface kinetic reactions in the growth of the epilayers. Two different models for the incorporation of Se molecules, one with a highly reactive physisorbed state and the other with a relatively nonreactive physisorbed state are employed for the simulations. It is shown that the structural quality of the epilayers is very sensitive to the flux ratio if the physisorbed state is relatively nonreactive. It is also shown that if the physisorbed state is highly reactive, good quality epilayers are obtained over a wide range of flux ratio. Based on the present study, it is suggested that the reactivity of the physisobed state can be investigated by comparing the results of the simulations with the reflection high energy electron diffraction observations of the surface of the growing film.

Paper Details

Date Published: 20 April 1987
PDF: 9 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941008
Show Author Affiliations
R. Venkatasubramanian, Purdue University (United States)
N. Otsuka, Purdue University (United States)
S. Datta, Purdue University (United States)
L. A. Kolodziejski, Purdue University (United States)
R. L. Gunshor, Purdue University (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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