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Proceedings Paper

Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te
Author(s): P. Becla; D. Heiman; J. Misiewicz; P. A. Wolff; D. Kaiser
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Paper Abstract

Intentionally doped Cd1-xMnxTe crystals with composition 0.1 < x < 0.3 were grown by the vertical Bridgman technique. Systematic studies were made of: (a) interaction of native defects with foreign impurities; (b) the mechanisms for substitutional doping of the accep-tors Cu, Au, P and As; and (c) the binding energies of various defects. The measurements involve a combination of crystallographic, electrical and optical studies. The results demonstrated that P and As play the role of effective acceptors. In Cu and Au doped samples, a high compensation mechanism was observed.

Paper Details

Date Published: 20 April 1987
PDF: 7 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941005
Show Author Affiliations
P. Becla, Massachusetts Institute of Technology (United States)
D. Heiman, Massachusetts Institute of Technology (United States)
J. Misiewicz, Massachusetts Institute of Technology (United States)
P. A. Wolff, Massachusetts Institute of Technology (United States)
D. Kaiser, IBM T.J. Watson Research Center (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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