Share Email Print

Proceedings Paper

MBE Of ZnSe On GaAs Epilayers
Author(s): L. A. Kolodziejski; R. L. Gunshor; M. R. Melloch; M. Vaziri; C. Choi; N. Otsuka
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is found to occur via a two-dimensional growth mechanism. Alternatively, nucleation on a GaAs substrate exhibits three dimensional growth characteristics. The differentiation of the type of nucleation is evidenced by reflection high energy electron diffraction intensity oscillations, as well as the dynamic behavior of the diffraction patterns. Photoluminescence measurements of pseudomorphic ZnSe epilayers grown on GaAs epilayers provides a direct measurement of ZnSe deformation potentials.

Paper Details

Date Published: 20 April 1987
PDF: 6 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941003
Show Author Affiliations
L. A. Kolodziejski, Purdue University (United States)
R. L. Gunshor, Purdue University (United States)
M. R. Melloch, Purdue University (United States)
M. Vaziri, Purdue University (United States)
C. Choi, Purdue University (United States)
N. Otsuka, Purdue University (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

© SPIE. Terms of Use
Back to Top