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Proceedings Paper

Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates
Author(s): H. Cheng; J. M. DePuydt; J. E. Potts; S. K. Mohapatra; T. L. Smith
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Paper Abstract

ZnSe epilayers have been grown on (100) GaAs substrates under various growth conditions in a systematic investigation of the relationships between growth parameters and film properties. Samples were grown under conditions corresponding to a 4 x 4 matrix in substrate temperature (Ts), Zn-to-Se beam pressure-ratio (BPR) space, with Ts = 250, 300, 350, and 400°C, and with BPR = 1/4:1, 1/2:1, 1:1, and 2:1. Measured film prOperties include donor and acceptor concentrations, carrier concentration and mobility, and the amplitude and width of donor-bound exciton (DBE) photoluminescence peaks. Under proper growth conditions we have been able to achieve room temperature carrier concentrations as low as 5.6 x 10 cm-3 , and peak mobilities of 7200 cm2 /V-sec. Low temperature photoluminescence spectra are dominated by the donor-bound exciton peak, at at 2.795eV; the amplitude of this peak is 2 to 3 orders of magnitude higher than the deep level emission in highly conductive films.

Paper Details

Date Published: 20 April 1987
PDF: 7 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941002
Show Author Affiliations
H. Cheng, 3M Company (United States)
J. M. DePuydt, 3M Company (United States)
J. E. Potts, 3M Company (United States)
S. K. Mohapatra, 3M Company (United States)
T. L. Smith, 3M Company (United States)


Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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