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Proceedings Paper

Stoichiometric Property Of ZnSe/GaAs Interface Grown By MOCVD
Author(s): Ikuo Suemune; Koutoku Ohmi; Takashi Kanda; Yasuo Kan; Masamichi Yamanishi
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Paper Abstract

Stoichiometric property of ZnSe film at GaAs interface was found to be critically dependent on the surface conditions of the GaAs substrates. It is clarified that the main factor governing the interface stoichiometry is the competition between the Zn-As bondings and the Ga-Se bondings at the interface. Especially, thin Ga-Se bonded layer at the interface is estimated to work as a barrier to diffusions of Zn or As and increases the sharpness of the heterointerface.

Paper Details

Date Published: 20 April 1987
PDF: 6 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940999
Show Author Affiliations
Ikuo Suemune, Hiroshima University (Japan)
Koutoku Ohmi, Hiroshima University (Japan)
Takashi Kanda, Hiroshima University (Japan)
Yasuo Kan, Hiroshima University (Japan)
Masamichi Yamanishi, Hiroshima University (Japan)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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