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Proceedings Paper

Photoreflectance Spectra Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As
Author(s): D. Huang; G. Ji; U. K. Reddy; H. Morkoc
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Paper Abstract

The PR spectra of AlxGa1-xAs with different x values (0<x<0.46) were studied. It is demonstrated that PR can be an extremely useful technique in the alloy examination, especially the composition determination, by comparing the PR and the low temperature absorption spectra. The impurity band observed in PR spectra is also discussed.

Paper Details

Date Published: 20 April 1987
PDF: 4 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940994
Show Author Affiliations
D. Huang, University of Illinois at Urbana-Champaign (United States)
G. Ji, University of Illinois at Urbana-Champaign (United States)
U. K. Reddy, University of Illinois at Urbana-Champaign (United States)
H. Morkoc, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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