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Proceedings Paper

Study And Characterization Of Low-Pressure AsH[sub]3[/sub] Cracking Cells In Gas Source MBE: Growth Of GaAs And AlGaAs Epitaxy
Author(s): C. w. Litton; L. W. Kapitan; P. W. Yu; D. C. Look
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Paper Abstract

MBE growth of GaAs and AlGaAs layers with good surface morphology and reasonably good PL spectral response has been achieved using two versions of a low-pressure, Calawa-type AsH3 cracker (long-quartz-tube containing a filamentary Ta catalyst) which produced predomi-nately As4 and As2 and smaller concentrations of As1 for the MBE growth. Quadruple mass analyzer measurements of the cracking patterns and the As4, As2, and As1 molecular species produced by the gas cracking furnaces are also reported.

Paper Details

Date Published: 20 April 1987
PDF: 8 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940993
Show Author Affiliations
C. w. Litton, AFWAL/AADR (United States)
L. W. Kapitan, AFWAL/AADR (United States)
P. W. Yu, Wright State University (United States)
D. C. Look, Wright State University (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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