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Proceedings Paper

Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates
Author(s): R. Houdre; G. Munns; H. Morkoc; C. Choi; N. Otsuka; S. L. Zhang; D. Levi; M. V. Klein
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Paper Abstract

Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates, subjected to various types of annealing, exhibit a substantial reduction in dislocation density near the interface and in the bulk of the epitaxial layer. Different kinds of annealing are examined, ex-situ annealing which is done in a furnace after the growth and in-situ annealing which is done during the growth.

Paper Details

Date Published: 20 April 1987
PDF: 5 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940992
Show Author Affiliations
R. Houdre, University of Illinois at Urbana-Champaign (United States)
G. Munns, University of Illinois at Urbana-Champaign (United States)
H. Morkoc, University of Illinois at Urbana-Champaign (United States)
C. Choi, Purdue University (United States)
N. Otsuka, Purdue University (United States)
S. L. Zhang, University of Illinois at Urbana-Champaign (United States)
D. Levi, University of Illinois at Urbana-Champaign (United States)
M. V. Klein, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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