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Proceedings Paper

Anisotropic Growth Processes On GaAs(100) And Ge(100)
Author(s): P. R. Pukite; S. Batra; P. I. Cohen
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Paper Abstract

We have used reflection high energy electron diffraction (RHEED) to follow the growth of GaAs on misoriented GaAs(100), using molecular beam epitaxy (MBE). We find anisotropies in the step order, kink density and the growth oscillations as a function of substrate misorientation and direction of surface misorientation. For comparison in a simple system, growth of Ge on Ge(100) is also followed. On the singular Ge(100) surface, we observe strong RHEED oscillations accompanied by a strong anisotropy in the nucleation of the islands during growth. These islands show up as long intersecting streaks in the diffraction pattern when the electron beam is incident along the [010] direction. In the presence of As4, these anisotropic features become more striking and stronger RHEED oscillations are observed over a wider temperature range.

Paper Details

Date Published: 20 April 1987
PDF: 5 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940991
Show Author Affiliations
P. R. Pukite, University of Minnesota (United States)
S. Batra, University of Minnesota (United States)
P. I. Cohen, University of Minnesota (United States)


Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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