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Proceedings Paper

Electro-Optic Sampling Using Injection Lasers
Author(s): J. M. Wiesenfeld; A. J. Taylor; R. S. Tucker; G. Eisenstein; C. A. Burrus
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Paper Abstract

The measurement of electrical waveforms from high-speed electronic and optoelectronic devices using electro-optic sampling in GaAs is described. In addition, a discussion of non-invasive sampling of waveforms internal to integrated circuits fabricated on III-V materials is presented. The sources of ultrashort optical pulses for these measurements are InGaAsP injection lasers which are either modelocked or gain-switched. Temporal resolution as low as 12 ps and sensitivity of 1.5 mV/ Hz have been obtained. The system is simple and compact.

Paper Details

Date Published: 2 February 1988
PDF: 6 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940985
Show Author Affiliations
J. M. Wiesenfeld, AT&T Bell Laboratories (United States)
A. J. Taylor, AT&T Bell Laboratories (United States)
R. S. Tucker, AT&T Bell Laboratories (United States)
G. Eisenstein, AT&T Bell Laboratories (United States)
C. A. Burrus, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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