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Proceedings Paper

Picosecond Photoconductive Sampling Measurements Of The Scattering Parameters Of High Speed Field Effect Transistors
Author(s): Steven C. Moss; Duane D. Smith; Donald E. Cooper
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Paper Abstract

We describe stimulus-response measurement techniques based on the photoconductive generation and sampling of picosecond electrical pulses for measuring the high frequency scattering parameters of high speed microwave devices. We compare these techniques with more conventional microwave diagnostic techniques.

Paper Details

Date Published: 2 February 1988
PDF: 22 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940977
Show Author Affiliations
Steven C. Moss, The Aerospace Corporation (United States)
Duane D. Smith, The Aerospace Corporation (United States)
Donald E. Cooper, The Aerospace Corporation (United States)


Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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