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Proceedings Paper

Photoconductor Pulse Generators And Sampling Gates For Characterization Of High-Speed Devices And Transmission Lines
Author(s): Nicholas G. Paulter; Robert B. Hammond
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Paper Abstract

We describe photoconductive semiconductor devices developed for application in diagnostics of high-speed electronic devices and circuits. Both pulse generation and sampling functions are provided by these ultrafast photoconductors. The photoresponse of different semiconductor materials (GaAs, InP, Si) that have been ion bombarded (Ar, H, He, Ne, 0, Si) was investigated and characterized. Response times as short as 1 picosecond have been observed. High frequency propagation characteristics of microstrip and coplanar waveguide transmission lines have been studied and modelled. Application of this measurement technique to the characterization of a microwave GaAs transistor is presented.

Paper Details

Date Published: 2 February 1988
PDF: 11 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940976
Show Author Affiliations
Nicholas G. Paulter, Los Alamos National Laboratory (United States)
Robert B. Hammond, Los Alamos National Laboratory (United States)

Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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