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Proceedings Paper

Millimeter Wave Monolithic GaAs Power FET Amplifiers
Author(s): B. Kim; H. Q. Tserng; H. D. Shih
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Paper Abstract

Millimeter-wave monolithic GaAs power FETs with total gate widths of up to 400 pm and output powers up to 200 mW have been developed. These amplifiers were fabricated using sub-half-micrometer gate length FETs on MBE-grown epitaxial layers with n+ contact layers. A source overlay structure with via groundings has been used for the FET design. Power densities of 0.53 W/mm, 0.45 W/mm, and 0.25 W/mm were obtained at 34 GHz, 41 GHz, 54 GHz, respectively. Power-added efficiency of 33% was obtained at 35 GHz with 0.53 W/mm power density.

Paper Details

Date Published: 2 February 1988
PDF: 10 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940961
Show Author Affiliations
B. Kim, Texas Instruments Incorporated (United States)
H. Q. Tserng, Texas Instruments Incorporated (United States)
H. D. Shih, Texas Instruments Incorporated (United States)


Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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