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Proceedings Paper

Simple And Inexpensive Method For Testing High Speed Semiconductor Devices Using Electro-Optics Sampling
Author(s): K. W. Forsyth; R. S. Jones; J. R. Lindemuth
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Paper Abstract

A new method of semiconductor device testing is described which enables the use of electro-optic sampling for routine semiconductor device measurements. The technique is well suited for testing of discrete devices in die form. Pulse risetimes less than 4 picoseconds, corresponding to frequencies well over 100 GHz, are generated and measured, with sensitivities of a few millivolts.

Paper Details

Date Published: 2 February 1988
PDF: 5 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940956
Show Author Affiliations
K. W. Forsyth, EG&G Princeton Applied Research (United States)
R. S. Jones, EG&G Princeton Applied Research (United States)
J. R. Lindemuth, EG&G Princeton Applied Research (United States)


Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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