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Proceedings Paper

Analysis Of High Speed GaAs ICs With Electro-Optic Probes
Author(s): X. C. Zhang; R. K. Jain
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Paper Abstract

We describe the use of electro-optic probes for the characterization of GaAs ICs. The use of various methods of electro-optic probing for measuring on-chip waveforms is discussed, as are the principal features, and the major advantages and disadvantages of each method. Details of the back-side electro-optic probe are discussed, and representative examples illustrating its utility and limitations for the analysis of high-speed ICs are discussed. New methods of probing are proposed, and a few downstream applications are outlined.

Paper Details

Date Published: 2 February 1988
PDF: 22 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940953
Show Author Affiliations
X. C. Zhang, Amoco Research Center (United States)
R. K. Jain, Amoco Research Center (United States)


Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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