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Proceedings Paper

Characterization Of Logic Devices With Photoconductively Generated Picosecond Pulses
Author(s): J. M. Halbouti; P. G. May; M. B. Ketchen
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Paper Abstract

Photoconductive picosecond electrical pulse generators and photoconductive sampling gates are ideally suited to the characterization of high speed logic devices, particularly silicon devices, and of VLSI wiring structures. We review in this paper the fabrication of photoconductive switches compatible with the silicon device technologies and some of their applications to the characterization of high speed devices.

Paper Details

Date Published: 2 February 1988
PDF: 9 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940947
Show Author Affiliations
J. M. Halbouti, IBM Thomas J. Watson Research Center (United States)
P. G. May, IBM Thomas J. Watson Research Center (United States)
M. B. Ketchen, IBM Thomas J. Watson Research Center (United States)


Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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