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Proceedings Paper

Monte-Carlo Study Of Ballistic Transport In Heterojunction Bipolar Transistors (HJBTs) And In High Electron Mobility Transistors (HEMTs)
Author(s): J. L. Pelouard; R. Castagne; P. Hesto
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Paper Abstract

The scaling of device geometry down to submicron dimensions is the guideline to improve the IC's performances. On other hand the very high electric fields present in short stuctures lead to non-stationnary transport phenomena. We will distinguish velocity overshoot due to low velocity relaxation times and ballistic transport where electrons fly without collision. Two kinds of devices showing these phenomena will be presented: HEMT's in which high carrier densities flow with velocity overshoot and HJBT's in which the conduction band discontinuity permits a ballistic injection in the base. Technological tendencies, performances and limitations for these two devices will be reviewed.

Paper Details

Date Published: 2 February 1988
PDF: 17 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940929
Show Author Affiliations
J. L. Pelouard, Laboratoire de Microstructures et de Mici:oelectronraue (France)
R. Castagne, Universite Paris-Sud (France)
P. Hesto, Universite Paris-Sud (France)

Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

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