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Proceedings Paper

Spectroellipsometric Characterization Of Inhomogeneous Films
Author(s): B. A. Tirri; A. Turner; P. C. Van Buskirk
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Paper Abstract

Determination of the compositional depth profile of an inhomogeneous film structure is often approached via surface analysis techniques used in a sputter depth profiling mode. An alternative is to model the compositional profile to fit optical measurement data, such as multiple incident angle or spectroscopic ellipsometric data. This paper presents the application of a statistical approach to this analysis problem. Multiple incident angle and multiple wavelength ellipsometer measurements have been made on hafnia and alumina single films on borosilicate glass substrates. Theoretical sensitivity data of the measured quantities T, A on the index and thickness of the film is presented and discussed. The measurement data is then numerically fit to several models that express small inhomogeneities in the film refractive index as a system of multiple homogeneous films. Existence of local minima in the value of the chosen merit function and statistical techniques that permit location of the global minimum are addressed by 'this approach. Results are discussed in terms of the magnitude of the merit function and compared to spectral reflectance measurements made on the coated samples.

Paper Details

Date Published: 22 April 1987
PDF: 10 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940922
Show Author Affiliations
B. A. Tirri, Perkin-Elmer Corporation (United States)
A. Turner, Perkin-Elmer Corporation (United States)
P. C. Van Buskirk, Perkin-Elmer Corporation (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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