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Proceedings Paper

Picosecond Transient Reflectivity Of Photowashed Gallium Arsenide Surfaces
Author(s): J. E. Wessel; S. M. Beck; D. C. Marvin
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Paper Abstract

Picosecond transient reflectivity was applied to measure surface recombination processes in intrinsic and n-doped GaAs. Photowashed surfaces were characterized by slow recombination and the results imply flat band conditions were achieved. Unwashed samples are characterized by rapid, complex surface charge carrier kinetics.

Paper Details

Date Published: 22 April 1987
PDF: 3 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940920
Show Author Affiliations
J. E. Wessel, The Aerospace Corporation (United States)
S. M. Beck, The Aerospace Corporation (United States)
D. C. Marvin, The Aerospace Corporation (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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