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Proceedings Paper

Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy
Author(s): D. K. Gaskill; J. Davis; R. S. Sillmon; M. Sydor
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Paper Abstract

Infrared reflectance spectroscopy, in the range of 4000 to 250 cm-1, has been used to non-destructively characterize the carrier concentration and thickness of n-type epitaxial GaN and AlGai_xAs and S-doped bulk InP. Measurements of carrier concentration and thickness uncertain to 2-4% and 2 % are typical and relative differences of 2 and 1% respectively can be observed from different areas of the sample. This reflectance tool is sensitive to carrier concentrations above about 1 x 1017cm-for the semicondu9tors studied here and is estimated to be sensitive to concentrations in the low 10 cm range for the heavier III-V's, e.g., GaSb and InSb. A by-product of these measurements has been the improvement of an organometallic vapor phase epitaxy system with minimal interruption to the growth program because of the quick turn-around time of this technique.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940919
Show Author Affiliations
D. K. Gaskill, Naval Research Laboratory (United States)
J. Davis, Naval Research Laboratory (United States)
R. S. Sillmon, Naval Research Laboratory (United States)
M. Sydor, University of Minnesota (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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