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Proceedings Paper

Optical Characterization Of Epitaxial And Doped Semiconductors
Author(s): M. Geddo; D. Maghini; A . Stella; M. Cottini
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Paper Abstract

In this work it is shown that the optical characterization of doped semiconductor layers can give important information particularly on the main properties of the free carriers. In particular, a measurement of the p-polarized light reflected from doped Si films epitaxially grown on Si substrates is shown to give information on the free carrier concentration and also on the effective mass. Data on Pt Silicides are also reported.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940918
Show Author Affiliations
M. Geddo, University di Pavia (Italy)
D. Maghini, University di Pavia (Italy)
A . Stella, University di Pavia (Italy)
M. Cottini, S.G.S. Microelettronica (Italy)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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