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Proceedings Paper

Far Infrared Reflectance Spectroscopy Of AlAs-GaAs Microstructures
Author(s): R. Sudharsanan; S. Perkowitz; S. S. Yom; T. J. Drummond
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Paper Abstract

We report infrared reflectance spectra in the range 100-450 cm-1 for an AlAs-GaAs heterostructure and three AlAs-GaAs superlattices with different periods. All the spectra clearly exhibit the TO phonon modes of pure GaAs and AlAs and a sharp interference peak at the GaAs LO frequency. The heterostructure data yield a set of phonon parameters for unoxidised AlAs. The superlattice spectra exhibit additional structure between 225 and 400 cm-1 and a broadening of the GaAs TO peak. The long wavelength superlattice optical theory of Agranovich and Kravtsov explains most of the features of the superlattice reflectivity.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940914
Show Author Affiliations
R. Sudharsanan, Emory University (United States)
S. Perkowitz, Emory University (United States)
S. S. Yom, Emory University (United States)
T. J. Drummond, Sandia National Laboratory (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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