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Proceedings Paper

Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-Gaas
Author(s): H. Shen; P. Parayanthal; Fred H. Pollak; R. N. Sacks; G. Hickman
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Paper Abstract

We have investigated symmetry forbidden longitudinal optic Raman scattering for various polarization configurations at 4579A from the <100> surface of heavily doped n-GaAs caused by the strong surface-fields and high impurity levels. We have evaluated the magnitude and phase of the coefficient of the electric-field induced term as well as the magnitude of the coefficient of the impurity-induced factor. The former parameter may be very useful for the contactless evaluation of space charge electric fields in GaAs.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940913
Show Author Affiliations
H. Shen, Graduate School and University Center of the City University of New York (United States)
P. Parayanthal, AT&T Bell Telephone Laboratories (United States)
Fred H. Pollak, Graduate School and University Center of the City University of New York (United States)
R. N. Sacks, United Technologies Research Center (United States)
G. Hickman, Brooklyn College of CUNY (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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