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Proceedings Paper

Optical Characterization Of Monocrystalline Silicon Carbide Thin Films
Author(s): H. J. Kim; R. F. Davis
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Paper Abstract

High-quality monocrystalline beta-SiC thin films were grown via two-step process of conversion of the Si(1002) surface by reaction with C2H4 and the subsequent chemical vapor deposition (CVD) at 1360 C and 1 atm total pressure. Four dopants, B and Al for p-type and N and P for n-type, were also incorporated into monocrystalline beta-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped beta-SiC thin films and to investigate the effects of dopants on the structure of the doped beta-SiC thin films. The changes in the shapes of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples. The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at 850cm71 respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

Paper Details

Date Published: 22 April 1987
PDF: 9 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940912
Show Author Affiliations
H. J. Kim, Seoul National University (Korea)
R. F. Davis, North Carolina State University (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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