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Proceedings Paper

Raman And Optical Spectroscopy Of Nanocrystalline Silicon Films
Author(s): Z. Iqbal; S. Veprek
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Paper Abstract

The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.

Paper Details

Date Published: 22 April 1987
PDF: 4 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940911
Show Author Affiliations
Z. Iqbal, Allied-Signal Inc. (United States)
S. Veprek, University of Zurich (Switzerland)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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