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Proceedings Paper

Raman Scattering For Semiconductor Interface Analysis
Author(s): R. J. Nemanich
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Paper Abstract

The applications of Raman spectroscopy to study semiconductor interfaces and the initial phases of interface formation is described. The limitations of weak signal from interface structures has proved a severe limitation, but it has recently been shown that multi-layered thin film structures can be made which utilyze optical interference properties to enhance the Raman scattering from thin films and thin film interfaces. This technique (termed IERS) has been applied to study several metal-Silicon interfaces. An even more difficult problem is the study of interface formation during ultra high vacuum (UHV) deposition on atomically clean surfaces. The experimental considerations from in situ UHV Raman scattering will be described. The results of Raman scattering for the interface of Pd deposited on crystalline and amorphous Si are presented. Both the IERS and in situ UHV measurements are used to explore the mechanisms of silicide formation.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940910
Show Author Affiliations
R. J. Nemanich, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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