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Proceedings Paper

Raman Scattering From Semiconductor Thin Films
Author(s): Howard E. Jackson; Joseph T. Boyd; Samhita Dasgupta; Hsindao E. Lu; Thomas D. Mantei
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Paper Abstract

The use of Raman spectroscopy to characterize thin silicon films formed by laser recrystallization using different capping layers, thin silicon films formed by plasma deposition, and thin films of tungsten silicide formed by rapid thermal annealing is reported.

Paper Details

Date Published: 22 April 1987
PDF: 3 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940909
Show Author Affiliations
Howard E. Jackson, University of Cincinnati (United States)
Joseph T. Boyd, University of Cincinnati (United States)
Samhita Dasgupta, University of Cincinnati (United States)
Hsindao E. Lu, University of Cincinnati (United States)
Thomas D. Mantei, University of Cincinnati (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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