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Proceedings Paper

Raman Microscopy Of Semiconductor Films
Author(s): Philippe M Fauchet; Ian H. Campbell
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Paper Abstract

The Raman spectrum of semiconductors is sensitive to changes in the structural, mechanical and electrical properties. We report results obtained with the Raman microprobe after laser processing or damage of semiconductor thin films. The spatial resolution in our experiments has allowed the observation of unsuspected modifications.

Paper Details

Date Published: 22 April 1987
PDF: 3 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940908
Show Author Affiliations
Philippe M Fauchet, Princeton University (United States)
Ian H. Campbell, Princeton University (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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