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Proceedings Paper

Growth Of Atomic Layer Structures By Modified MOCVD And Their Characterization
Author(s): Y. Horikoshi; N. Kobayashi; T. Toriyama
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Paper Abstract

When Ga or Al atoms are supplied on a clean GaAs surface under As-free or low As pressure atomosphere, they are quite mobile and migrate very rapidly on the growing surface. This characteristic was utilized for growing atomically-flat GaAs-AlGaAs heter-interfaces, and for lowering the growth temperature. The method is based on metal-organic chemical vaper deposition and employs alternate supply of gaseous sources. (AlAs)n(GaAs) superlattices and AlGaAs-GaAs single quantum wells were grown using this method, and characterized with X-ray diffraction, photoluminescence, and Raman scattering measurement. These measurements revealed improved flatness of AlGaAs-GaAs heterojunction interfaces grown by this method.

Paper Details

Date Published: 22 April 1987
PDF: 7 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940907
Show Author Affiliations
Y. Horikoshi, NTT Electrical Communications Laboratories (Japan)
N. Kobayashi, NTT Electrical Communications Laboratories (Japan)
T. Toriyama, NTT Electrical Communications Laboratories (Japan)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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