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Proceedings Paper

Defect Detection In Silicon By Optical Beam Induced Reflectance (OBIR)
Author(s): G. E. Carver; J. D. Michalski
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Paper Abstract

Electrically active flaws near the surface of silicon wafers generally impair the successful manufacture of integrated circuits. Detrimental defects such as stacking faults, dislocations, and metallic precipitates are often 1-2 microns in size. Thus, a defect detection system would need to exhibit both high spatial resolution and contrast at defective sites. Several approaches for defect detection are in use, although no technique appears capable of non-destructively detecting 1 micron defects in silicon, without vacuum, in a timely manner. A pump-probe laser system has been developed to satisfy these requirements.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940906
Show Author Affiliations
G. E. Carver, AT&T (United States)
J. D. Michalski, AT&T (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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