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Proceedings Paper

Infrared-Wavelength Modulation Spectra Of InGaAs Grown By MBE And LPE
Author(s): T. W. Nee; T. L. Cole; A. K. Green; M. E. Hills; C. K. Lowe-Ma; Victor Rehn
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Paper Abstract

We present the infrared wavelength-modulation spectra of molecular-beam-epitaxy- (MBE) and liquid-phase-epitaxy- (LPE) grown Ini_xGaxAs (0.45 < x < 0.50) epilayers on (100) InP substrates. The transmittance, reflectance, and their wavelength derivatives are measured in the neighborhood of the band gap at room temperature. The dependence of band gap on strain is presented and analyzed. It is shown that epilayers partially relax the interfacial strain according to their thickness, giving different dependences of band gap on alloy composition. The results are analyzed by introducing a normalized fractional-strain parameter and applying Hooke's-law elasticity and deformation potential theories.

Paper Details

Date Published: 22 April 1987
PDF: 10 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940905
Show Author Affiliations
T. W. Nee, Naval Weapons Center (United States)
T. L. Cole, Naval Weapons Center (United States)
A. K. Green, Naval Weapons Center (United States)
M. E. Hills, Naval Weapons Center (United States)
C. K. Lowe-Ma, Naval Weapons Center (United States)
Victor Rehn, Naval Weapons Center (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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