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Proceedings Paper

Spatial Characterization Of Semiconductors Using 'Laser Beam Induced Current (LBIC)'
Author(s): J. Bajaj; L. O. Bubulac; P. R. Newman; W. E. Tennant
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Paper Abstract

An optical analog of Electron Beam Induced Current (EBIC) technique called laser beam induced current (LBIC) has been developed and utilized to obtain maps of electrically active defects in semiconductor materials. We have demonstrated the use of LBIC for spatial evaluation of LPE HgCdTe and for characterizing HgCdTe p-n junction detector arrays, in a non-destructive way without making any electrical contacts to individual detector elements.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940904
Show Author Affiliations
J. Bajaj, Rockwell International Science Center (United States)
L. O. Bubulac, Rockwell International Science Center (United States)
P. R. Newman, Rockwell International Science Center (United States)
W. E. Tennant, Rockwell International Science Center (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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