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Proceedings Paper

Study Of GaAs/AlGaAs And InGaAs/GaAs Multiple Quantum Wells Grown On Non-Polar Substrates By Photoreflectance
Author(s): U. K. Reddy; G. Ji; R. Houdre; H. Unlu; D. Huang; H. Morkoc
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Paper Abstract

We have studied for the first time the optical properties of GaAs/AlxGa1-xAsAs multiple quantum wells (MQWs) grown on Si and Ge substrates and InyGai-yAs/GaAs strained layer MQWs grown on Si substrates by photoreflectance. These preliminary results show that good quality epilayers from different semiconductors can be grown on non-polar substrates indicating the possibility of new device materials besides their importance in fundamental research. The experimental data were compared with calculations based on envelope-function approximation and fit to third-derivative functional form of reflectance modulation theory.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940901
Show Author Affiliations
U. K. Reddy, University of Illinois at Urbana-Champaign (United States)
G. Ji, University of Illinois at Urbana-Champaign (United States)
R. Houdre, University of Illinois at Urbana-Champaign (United States)
H. Unlu, University of Illinois at Urbana-Champaign (United States)
D. Huang, University of Illinois at Urbana-Champaign (United States)
H. Morkoc, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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