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Proceedings Paper

Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
Author(s): G. Niquet; J. P. Dufour; G. Chabrier; M. Q' Jani; P. Vernier
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Paper Abstract

This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into the semiconductor.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940900
Show Author Affiliations
G. Niquet, Universite de Bourgogne (France)
J. P. Dufour, Universite de Bourgogne (France)
G. Chabrier, Universite de Bourgogne (France)
M. Q' Jani, Universite de Bourgogne (France)
P. Vernier, Universite de Bourgogne (France)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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