Share Email Print
cover

Proceedings Paper

Piezomodulated Electronic Spectra Of Semiconductor Heterostructures: Gaas/Alxgal_Xas Quantum Well Structures
Author(s): Y. R. Lee; A. K. Ramdas; F. A. Chambers; J. M. Meese; L. R. Ram Mohan
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

When heterostructures of semiconductors are subjected to an alternating strain, the piezomodulated optical properties, as in the bulk, display signatures characteristic of electronic transitions. We have applied the piezomodulation technique to the electronic transitions associated with GaAs/AlxGai_xAs quantum well structures. Our results obtained at temperatures down to that of liquid helium with single-, double-, and multiple-quantum wells reveal electronic transitions in the wells, the barriers and the buffer layer with exceptional clarity. The effects of coupling in the double and multiple quantum wells are clearly identified. Relative advantages and limitations of the piezomodulation and the now well-established photomodulation techniques'are discussed on the basis of experimental results on identical samples under comparable experimental conditions.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940899
Show Author Affiliations
Y. R. Lee, Purdue University (United States)
A. K. Ramdas, Purdue University (United States)
F. A. Chambers, Amoco Corporation (United States)
J. M. Meese, Amoco Corporation (United States)
L. R. Ram Mohan, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

© SPIE. Terms of Use
Back to Top