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Proceedings Paper

Photoreflectance Spectroscopy Studies Of Alloy Compositions And Ion Implant Damage In Zincblende-Type Semiconductors
Author(s): R. C. Bowman; R. L. Alt; K. W. Brown
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Paper Abstract

The optical transitions near the band gap energy E0 have been obtained by photoreflectance (PR) measurements on GaAs and CdTe single crystals, various epitaxially grown AlxGai_xAs layers, and GaAs-AlGaAs quantum well and superlattice structures. The PR spectra have been analyzed to determine the behavior of the E0 values and lineshape parameters at different alloy compositions and structural periodicities for the multilayer materials. The alloy compositions derived from the PR data are shown to be consistent with the values obtained by Raman and x-ray diffraction measurements on the same samples. PR is also found to be a convenient method to study the effects of ion implantation and subsequent annealing treatments on the structural and electronic properties of GaAs and CdTe. The incomplete recoveries of the PR spectra following thermal anneals at 500°C and 850°C for CdTe and GaAs, respectively, suggest these treatments are only partially effective in reducing the lattice damage caused by these implants.

Paper Details

Date Published: 22 April 1987
PDF: 9 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940898
Show Author Affiliations
R. C. Bowman, The Aerospace Corporation (United States)
R. L. Alt, The Aerospace Corporation (United States)
K. W. Brown, The Aerospace Corporation (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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