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Proceedings Paper

Comparative Responses Of Electroreflectance And Photoreflectance In Gaas
Author(s): R. Glosser; N. Bottka
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Paper Abstract

Photoreflectance (PR) and electroreflectance (ER) responses were compared on samples of GaAs in order to establish a detailed relation between the two techniques. The majority of experiments were made on an n-GaAs Schottky Barrier in the vicinity of the fundamental edge (1.4 eV). PR spectra were studied as a function of DC bias with the modulation obtained by chopped laser radiation. A complementary set of ER measurements were made over the same bias range, and a comparison was made of ER response with and without CW laser illumination. This yielded a direct relationship between CW laser power and an equivalent effective bias representing the laser irradiation reduction of the band bending. The correspon-dence between ER and PR allowed us to calculate the average electric field in the depletion layer based on the Franz-Keldysh oscillations present in both spectra. Aspnes and Studna (1973) have shown that the slope of the plot of the energy value of the oscillation extremum index n yields the average electric field provided that the interband effective masses are known. This result indicates that PR can determine submerged interfacial fields with-out any electrical contact to the sample.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940897
Show Author Affiliations
R. Glosser, Naval Research Laboratory (United States)
N. Bottka, Naval Research Laboratory (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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