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Proceedings Paper

Electroreflectance And Photoreflectance Characterization Of The Space Charge Region In Semiconductors: Ito/Inp As A Model System
Author(s): R. N. Bhattacharya; H. Shen; P. Parayanthal; Fred H. Pollak; T. Coutts; H. Aharoni
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Paper Abstract

We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, εsdc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (Eac)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.

Paper Details

Date Published: 22 April 1987
PDF: 7 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940896
Show Author Affiliations
R. N. Bhattacharya, Brooklyn College of CUNY (United States)
H. Shen, Brooklyn College of CUNY (United States)
P. Parayanthal, AT&T Bell Telephone Laboratory (United States)
Fred H. Pollak, Graduate School and University Center of the City University of New York (United States)
T. Coutts, Solar Energy Research Institute (United States)
H. Aharoni, University of the Negev (Israel)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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