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Proceedings Paper

Photoluminescence And Stimulated Emission Of Highly Excited Gaas/A1Gaas Single Quantum Wells
Author(s): S. Borenstain; D. Fekete; Arza Ron; E. Cohen
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Paper Abstract

GaAs/A1xGa1-xAs single quantum wells (SQW)of width in the range of 20-40Å are probed by monitoring the luminescence and stimulated emission spectra under intense photoexcitation. The emission is due to the radiative recombination of an electron-hole plasma (EHP). Its density (n) and effective temperature (Teff) are obtained by model fitting the photoluminescence band shape. We find that in the ambient temperature range 4K-220K the carrier concentration is increasing with temperature from 1011 to 1013cm-2. The optical gain of the stimulated emission(SE)was measured by the variable stripe length method. A comparison with gain values measured in bulk GaAs under the same excitation conditions shows that the EHP in the SQW is about 20 times denser than in the bulk. The appearence of stimulated emission only at the lowest energy of the emission spectrum (where the unexcited crystal is transparent) means that only a fraction of the illuminated volume is filled by the EHP.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940894
Show Author Affiliations
S. Borenstain, Technion-Israel Institute of Technology (Israel)
D. Fekete, Technion-Israel Institute of Technology (Israel)
Arza Ron, Technion-Israel Institute of Technology (Israel)
E. Cohen, Technion-Israel Institute of Technology (Israel)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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