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Proceedings Paper

Low Temperature Photoluminescence Signature Of A Two-Dimensional Electron Gas
Author(s): Emil S. Koteles; J. Y. Chi; R. P. Holmstrom
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Paper Abstract

We report the first observation of a narrow, low temperature photoluminescence peak associated with the presence of a two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface. The exact physical mechanism giving rise to this emission is not clear. However, based on a large number of samples, its intensity is found to be directly related with the concentration of the electron gas. The temperature and exciting-intensity dependencies of the peak are consistent with a model based on free excitons in GaAs bound to the electron quantum well formed at the heterointerface by the 2DEG.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940893
Show Author Affiliations
Emil S. Koteles, GTE Laboratories Incorporated (United States)
J. Y. Chi, GTE Laboratories Incorporated (United States)
R. P. Holmstrom, GTE Laboratories Incorporated (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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