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Proceedings Paper

Optical Characterization Of GaAs/AlxGai-xAs Quantum Well Structures And Superlattices By Photoluminescence And Photoexcitation Spectroscopy.
Author(s): J. J. Song; Y. S. Yoon; P. S. Jung; A. Fedotowsky; Y. B. Kim
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Paper Abstract

We present (I) low temperature excitation-wavelength-dependent photoluminescence studies in GaAs/AlxGai-xAs quantum well structures, which reveal the well thickness variations along the MBE growth direction, and (II) the photoluminescence excitation spectroscopy work carried out in the region of unconfined transitions with a series of GaAs/AlxGal-xAs superlattices which have a fixed well size and aluminum concentration in the barrier. We have found that the changes in the barrier widths of the superlattice samples can drastically affect the strengths and energies of the unconfined transitions.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940892
Show Author Affiliations
J. J. Song, University of Southern California (United States)
Y. S. Yoon, University of Southern California (United States)
P. S. Jung, University of Southern California (United States)
A. Fedotowsky, University of Southern California (United States)
Y. B. Kim, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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