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Proceedings Paper

Optical Characterization Of Single Quantum Wells Fabricated Under Conditions Of Interrupted Growth
Author(s): B. S. Elman; Emil S. Koteles; C. Jagannath; Y. J. Chen; S. Charbonneau; M. L.W. Thewalt
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Paper Abstract

Multiple peaks, recently observed in the low temperature photoluminescence (PL) spectra of GaAs/AlGaAs single quantum wells fabricated by momentarily interrupting the molecular beam epitaxial growth between adjacent but different semiconductor layers, have been interpreted as originating within smooth regions in the quantum well layer differing in width by exactly one monolayer. We have observed similar structure in similarly grown samples but find that low temperature PL can be misleading. However, higher temperature PL or PL excitation spectroscopy do provide unambiguous evidence for the model of interface smoothing due to growth interruption. Further, time-resolved spectra yield decay times of the individual peaks which are consistent with this interpretation.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940890
Show Author Affiliations
B. S. Elman, GTE Laboratories Incorporated (United States)
Emil S. Koteles, GTE Laboratories Incorporated (United States)
C. Jagannath, GTE Laboratories Incorporated (United States)
Y. J. Chen, GTE Laboratories Incorporated (United States)
S. Charbonneau, Simon Fraser University (Canada)
M. L.W. Thewalt, Simon Fraser University (Canada)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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