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Proceedings Paper

Use Of Photoluminescence Spectroscopy To Characterize The Crystalline Quality Of Cdte Films Grown By A Modified Csvt Technique
Author(s): J. G. Mendoza-Alvarez; F. Sanchez-Sinencio; O. Zelaya; J. Gonzalez-Hernandez; M. Cardenas; S. S. Chao
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Paper Abstract

We have employed photoluminescence measurements at 10-300°K to study the effects of deposition parame-ters, surfaces preparation and heat treatment on the properties of CdTe polycristalline thin films. The films were grown using a modified hot wall close spaced vapor transport system. We found strong differences in the photoluminescence spectra of samples grown under different conditions. Heat treatments in the as-grown samples increase the average particle size and reduce the native defect density.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940889
Show Author Affiliations
J. G. Mendoza-Alvarez, Centro de Investigacion y Estudios Avanzados del I.P.N. (Mexico)
F. Sanchez-Sinencio, Centro de Investigacion y Estudios Avanzados del I.P.N. (Mexico)
O. Zelaya, Centro de Investigacion y Estudios Avanzados del I.P.N. (Mexico)
J. Gonzalez-Hernandez, Centro de Investigacion y Estudios Avanzados del I.P.N. (Mexico)
M. Cardenas, Escuela Superior de Fisica y Mateniticas del I.P.N. (Mexico)
S. S. Chao, Energy Conversion Devices,Inc. (United States)


Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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