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Proceedings Paper

Scanning Photoluminescence
Author(s): E. K. Riemer; T. G. Stoebe; A. Azim Khan
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Paper Abstract

This paper reports on a computer-controlled system which has been designed for mapping photoluminescence (PL) intensities of GaAs wafers or epitaxial layers up to 3 inches in diameter. In this instrument, the excitation source may be moved at right angles to the sample surface without any change in the collection efficiency of the PL light. The PL intensities are measured at 2 mm intervals to reveal the homogeneity of the surface. Possible operating temperatures range from 4K to room temperature. The effectiveness of the system is demonstrated on Liquid-Encapsulated Czochralski (LEC), Horizontal Bridgman (HB) and epitaxial GaAs samples. This PL scanning technique shows the intensity variation in these samples to be closely related to the defect density distribution.

Paper Details

Date Published: 22 April 1987
PDF: 7 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940886
Show Author Affiliations
E. K. Riemer, University of Washington (United States)
T. G. Stoebe, University of Washington (United States)
A. Azim Khan, Washington State University (United States)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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