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Proceedings Paper

Optical Transitions And Enhanced Recombination Lifetimes In Quasi-Zero Dimensional Electron System In CdS[sub]x[/sub]Se[sub]1-x[/sub]
Author(s): Kai Shum; G. C. Tang; Mahesh R. Junnarkar; R. R. Alfano
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Paper Abstract

The recombination lifetimes for the radial and angular quantum number conserving 1S→1S and 1P→1P transitions from three-dimensionally confined electrons in CdSxSel-x were measured by time-resolved photoluminescence. The assignment of the observed transitions is supported by calculations of eigen energy levels, squared matrix element ratio for those transitions, steady-state and picosecond spectroscopic studies.

Paper Details

Date Published: 3 August 1987
PDF: 10 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940877
Show Author Affiliations
Kai Shum, City College of New York (United States)
G. C. Tang, City College of New York (United States)
Mahesh R. Junnarkar, City College of New York (United States)
R. R. Alfano, City College of New York (United States)


Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

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